Infineon IPD80R280P7: A High-Performance Power MOSFET for Demanding Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IPD80R280P7, a state-of-the-art power MOSFET engineered specifically to meet the rigorous demands of modern switching applications. This device exemplifies how advanced engineering can solve complex challenges in sectors ranging from industrial motor drives and renewable energy systems to high-performance computing and automotive power conversion.
Optimized for Superior Switching Performance
The IPD80R280P7 is built on Infineon’s proprietary CoolMOS™ P7 superjunction technology. This foundation is critical to its success, enabling an exceptional balance between low on-state resistance (R DS(on)) and low gate charge (Q G). With a maximum R DS(on) of just 28 mΩ at 10 V, conduction losses are minimized, allowing for higher efficiency operation. Simultaneously, the low gate charge ensures that switching losses are drastically reduced. This combination is paramount for applications operating at high switching frequencies, as it leads to cooler running systems, reduced stress on components, and the possibility of using smaller heatsinks and magnetic components, thereby increasing overall power density.
Robustness and Reliability for Demanding Environments
Beyond pure efficiency, the IPD80R280P7 is designed for unwavering reliability. It offers a high avalanche ruggedness and an exceptional body diode robustness (100% avalanche tested), making it highly resistant to voltage spikes and reverse recovery events that are common in inductive load circuits, such as motor control and power factor correction (PFC). This intrinsic robustness ensures a longer operational lifespan and greater system stability, even under harsh or unpredictable operating conditions. Furthermore, its low effective output capacitance (C OSS(er)) contributes to reduced turn-on losses, which is a significant advantage in zero-voltage switching (ZVS) topologies like LLC resonant converters.
Designed for Ease of Use and Integration
The device is offered in the industry-standard TO-220 FullPAK package. This package provides the proven mechanical robustness and familiar footprint for easy design-in, while the fully molded design offers enhanced isolation and safety compared to traditional exposed tab packages. This makes it an excellent choice for applications where creepage and clearance distances are a concern, simplifying the task of meeting international safety standards.
ICGOODFIND: The Infineon IPD80R280P7 stands as a benchmark for high-performance power MOSFETs. Its masterful blend of extremely low R DS(on), minimal switching losses, and outstanding ruggedness makes it an ideal and future-proof choice for designers pushing the limits of efficiency and power density in demanding switching power supplies, motor drives, and automotive systems.
Keywords:
1. CoolMOS™ P7 Technology
2. Low R DS(on)
3. High Switching Frequency
4. Avalanche Ruggedness
5. TO-220 FullPAK
