Infineon IPD50R280CE: A High-Performance Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom infrastructure to industrial motor drives and renewable energy applications, lies the power MOSFET. The Infineon IPD50R280CE stands out as a premier solution, engineered to meet these rigorous challenges with exceptional performance and reliability.

This device is a N-channel MOSFET built using Infineon's proprietary CoolMOS™ CE (Civil Engineering) technology, a hallmark of innovation in superjunction (SJ) MOSFETs. The core of its advantage lies in its remarkably low on-state resistance (R DS(on)) of just 28 mΩ (max. at V GS = 10 V). This ultra-low resistance is pivotal, as it directly translates to reduced conduction losses. When the MOSFET is fully switched on, less electrical energy is wasted as heat, leading to significantly higher efficiency in the system.

Furthermore, the IPD50R280CE is optimized for fast switching operations. Its low gate charge (Q G) and excellent figure-of-merit (FOM, R DS(on) Q G) ensure swift turn-on and turn-off transitions. This minimizes switching losses, which are a dominant source of inefficiency at high frequencies. The ability to operate efficiently at higher frequencies allows designers to use smaller passive components like inductors and capacitors, thereby increasing the overall power density of the end product.

Housed in a robust TO-252 (DPAK) package, this MOSFET offers a superior thermal performance, ensuring that the heat generated during operation is effectively dissipated. This ruggedness, combined with a high avalanche ruggedness specification, makes it an exceedingly reliable choice even in demanding environments. Its 650 V drain-source voltage rating provides ample headroom for a wide array of off-line and high-voltage applications, including power factor correction (PFC) stages and flyback converters.

ICGOOODFIND: The Infineon IPD50R280CE is a top-tier power MOSFET that masterfully balances ultra-low conduction losses, fast switching capability, and high robustness. It is an ideal component for designers aiming to push the boundaries of efficiency and power density in their switching power supplies and motor control applications.

Keywords:

1. CoolMOS™ CE

2. Low R DS(on)

3. High Efficiency

4. Fast Switching

5. 650V Rating